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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9034 Issued Date : 1999.03.17 Revised Date : 2002.05.08 Page No. : 1/3
HI13003
NPN EPITAXIAL PLANAR TRANSISTOR
Description
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
TO-251
Absolute Maximum Ratings (Ta=25C)
* Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ...................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C) ..................................................................................... 40 W Total Power Dissipation (Ta=25C) .................................................................................... 1.3 W * Maximum Voltages and Currents (Ta=25C) BVCEV Collector to Emitter Voltage .................................................................................. 700 V VCEO Collector to Emitter Voltage .................................................................................... 400 V VEBO Emitter to Base Voltage .............................................................................................. 9 V IC Collector Current ........................................................................................................... 1.5 A
Characteristics (Ta=25C)
Symbol BVCEO BVCEV IEBO ICEV *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 Cob Min. 400 700 8 5 Typ. 21 Max. 1 1 0.5 1 3 1 1.2 40 25 Unit V V mA mA V V V V V Test Conditions IC=10mA IC=1mA, VBE(OFF)=1.5V VEB=9V VCE=700V, VBE(OFF)=1.5V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=0.5A, VCE=2V VCE=2V, IC=1A VCB=10V, IE=0, f=1MHz
pF
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HI13003
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
Spec. No. : HE9034 Issued Date : 1999.03.17 Revised Date : 2002.05.08 Page No. : 2/3
Saturation Voltage & Collector Current
1000 VCE(sat) @ IC=3IB
125 C
o
75 C
o
Saturation Voltage (mV)
75 C
o
25 C
o
hFE
10
100 125 C
o
hFE @ VCE=2V
25 C
o
1 0.1 1 10 100 1000 10000
10 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=4IB
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=5IB
Saturation Voltage (mV)
1000 75 C 125 C 100
o o
Saturation Vpltage (mV)
1000 75 C 125 C 100 25 C
o o o
25 C
o
10 1 10 100 1000 10000
10 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VBE(sat) @ IC=4IB
Saturation Voltage & Collector Current
10000 VBE(sat) @ IC=5IB
Saturation Voltage (mV)
Saturation Voltage (mV)
75 C 1000 25 C
o
o
75 C 1000 25 C
o
o
125 C
o
125 C
o
100 1 10 100 1000 10000
100 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HI13003
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
Marking:
Spec. No. : HE9034 Issued Date : 1999.03.17 Revised Date : 2002.05.08 Page No. : 3/3
A
B
C D
H I 13003 Date Code Control Code
F 3 I E K 2 1
G
Style: Pin 1.Base 2.Collector 3.Emitter
H
J
3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50
Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HI13003
HSMC Product Specification

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